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Low Current 8 Volt, Low Noise High fT Silicon Transistor
Features
* * * * * * Low Current Operation High fT (8 GHz) Low Noise Figure with 1-5 mA Current Low Phase Noise Inexpensive Available on Tape and Reel
MP4T6825 Series
SOT-23
Description
The MP4T6825 series of low current silicon bipolar transistors provide low noise figure at a bias of 5-10 volts and collector current of 1-5 mA. These inexpensive surface mount transistors are useful for low noise amplifiers and VCOs from VHF through 2.5 GHz. The MP4T6825 series has high fT (8 GHz) and provides approximately 1.5 dB noise figure with 1-3 mA current. These transistors also have low phase noise when used in 510 volt low current VCOs through 3 GHz. The MP4T6825 series are inexpensive transistors designed for RF systems that require low current drain. This family of transistors is available in chip (MP4T682500), SOT-23 (MP4T682533), SOT-143 (MP4T682539), and in the MicroX (MP4T682535) packages. Surface mount packages are available on tape and reel.
SOT-143
Chip
Absulote Maximum Ratings at 25C
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction Temperature Storage Temperature Chips or Ceramic Packages Plastic Packages Power Dissipation1
1. 2.
Absolute Maximum
20V 12 V 1.5 V 25 mA +200C2 -65C to +200C -65C to +150C
See power derating curves. Die or ceramic packages -150C for plastic pacakges.
Specification Subject to Change Without Notice
M M-Pulse Microwave__________________________________________________________________________________
1
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
Low Current 8 Volt, Low Noise High fT Silicon Transistor Electrical Specifications at 25C
Symbol fT |S21E|2 Parameters Gain Bandwidth Product Insertion Power Gain Noise Figure Test Condition s VCE = 8V IC = 8 mA VCE = 8V IC = 8 mA f = 1 GHz f = 2 GHz VCE = 8V IC = 2 mA f = 1 GHz f = 2 GHz VCE = 8V IC = 8 mA f = 1 GHz f = 2 GHz VCE = 8V IC = 8 mA f = 1 GHz f = 2 GHz VCE = 8V IC = 15 mA f = 1 GHz f = 2 GHz Junction/ Ambient (Free Air) Junction/ Case Units GHz dB 15 typ. 8 typ. dB 1.8 max. 2.1 typ. dB 17 typ. 11 typ. dB 18 typ. 13 typ. dBm 15 typ. 13.5 typ. 70 max.
1
MP4T6825 Series
MP4T682535 Micro-X 8 typ. MP4T682539 SOT-143 8 typ.
MP4T682500 Chip 8 typ.
MP4T682533 SOT-23 8 typ.
14 typ. 7 typ. 1.9 max. 2.2 typ. 16 typ. 10 typ. 17 typ. 12 typ. 14 typ. 12.5 typ. 650 typ. 200 typ.
15 typ. 8 min. 1.8 max. 2.1 typ. 17 typ. 11 typ. 18 typ. 13 typ. 14 typ. 12.5 typ. 500 typ. 200 typ.
14 typ. 7 typ. 1.9 max. 2.2 typ. 16 typ. 10 typ. 17 typ. 12 typ. 15 typ. 13.5 typ. 625 typ. 200 typ.
NF
GTU (max)
Unilateral Gain
MAG
Maximum Available Gain Power Out at 1dB Compression Thermal Resistance Thermal Resistance
P1dB
RTH (J-A) RTH (J-C)
1.
C C/W
Junction to infinite heat sink.
Electrical Specifications at 25C
Parameters Collector Cut-off Current Emitter Cut-off Current Forward Current Gain Collector-Base Junction Capacitance Conditions VCB = 8 V IE = 0 VEB = 1 V IC = 0 VCE = 8 V IC = 5 mA VCB = 8 V IE = 0 f = 1 MHz Symbol ICBO IEBO hFE COB Min. 30 Typ. 110 0.25 Max. 100 1 250 0.40 Units nA A pF
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________ 2
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
Low Current 8 Volt, Low Noise High fT Silicon Transistor
MP4T6825 Series
MP4T682535 Typical Scattering Parameters in the MIcro-X Package VCE = 8 Volts, IC = 5 mA
Frequency (MHz) 100 300 500 700 900 1500 1900 2500 2900 3300 3900 4500 4900 5500 Frequency (MHz) 100 300 500 700 900 1500 1900 2500 2900 3300 3900 4500 4900 5500 Frequency (MHz) 100 300 500 700 900 1500 1900 2500 2900 3300 3900 S11E Mag. 0.66 0.54 0.41 0.32 0.25 0.14 0.11 0.09 0.10 0.10 0.15 0.17 0.20 0.23 S11E Mag. 0.49 0.36 0.26 0.20 0.13 0.10 0.11 0.13 0.14 0.15 0.20 0.27 0.25 0.29 S11E Mag. 0.26 0.22 0.20 0.20 0.20 0.22 0.24 0.27 0.29 0.31 0.36 Angle -48.6 -105.7 -136.0 -155.8 -169.8 161.3 146.4 126.6 115.1 104.4 92.3 Mag. 17.16 10.98 7.55 5.70 4.56 2.88 2.34 1.86 1.63 1.49 1.33 Angle -22.0 -55.9 -78.4 -96.0 -125.3 -152.7 160.2 134.4 115.4 102.3 90.5 79.2 70.0 59.3 Mag. 17.06 12.71 9.37 7.28 4.93 3.76 3.07 2.43 2.12 1.92 1.70 1.53 1.48 1.32 Angle -15.7 -42.2 -61.2 -75.3 -86.9 -115.2 -142.6 143.9 128.4 108.0 92.4 79.4 69.5 58.8 S21E Mag. Angle 12.95 164.7 10.74 139.8 8.54 122.7 6.91 110.8 5.74 101.8 3.75 83.3 3.10 73.1 2.46 60.6 2.15 52.1 1.95 47.2 1.72 35.9 1.56 26.4 1.50 19.4 1.35 9.9 S21E Angle 160.4 131.5 114.5 103.5 88.8 78.7 69.0 57.3 49.2 44.2 33.3 23.4 16.4 6.8 S21E Angle 154.3 122.3 106.7 97.0 89.8 74.1 64.4 53.1 45.1 39.5 29.7 Mag. 0.01 0.02 0.03 0.04 0.05 0.08 0.10 0.12 0.14 0.15 0.17 0.20 0.21 0.23 S12E Angle 86.0 71.9 66.4 64.7 63.8 62.0 59.1 55.6 53.0 51.1 46.7 45.0 42.2 37.9 S12E Angle 87.0 71.9 68.8 68.8 67.8 65.9 63.6 59.2 56.7 54.4 50.2 47.8 45.0 40.5 S12E Angle 84.7 72.6 71.5 72.3 72.5 70.7 68.6 65.6 64.1 61.9 58.3 S22E Mag 0.97 0.88 0.79 0.73 0.69 0.63 0.61 0.58 0.56 0.56 0.53 0.53 0.52 0.50 S22E Mag 0.96 0.83 0.74 0.70 0.65 0.63 0.61 0.58 0.57 0.57 0.54 0.54 0.53 0.51 S22E Mag 0.93 0.80 0.75 0.72 0.70 0.68 0.67 0.64 0.63 0.63 0.61 Angle -0.8 -14.8 -17.3 -19.8 -22.4 -31.3 -38.4 -48.2 -54.5 -61.5 -70.7 Angle -7.9 -17.6 -21.5 -24.0 -28.6 -33.4 -40.0 -48.9 -54.4 -60.7 -69.3 -80.0 -86.0 -94.2 Angle -6.7 -16.8 -22.4 -25.9 -28.5 -35.5 -42.1 -50.5 -55.7 -61.2 -69.6 -79.6 -85.3 -92.9
VCE = 8 Volts, IC = 10 mA
Mag. 0.01 0.02 0.03 0.04 0.06 0.07 0.09 0.12 0.13 0.15 0.17 0.19 0.21 0.23
VCE = 8 Volts, IC = 20 mA
Mag. 0.01 0.02 0.02 0.03 0.04 0.06 0.08 0.10 0.12 0.14 0.16
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________ 3
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
Low Current 8 Volt, Low Noise High fT Silicon Transistor
4500 4900 5500 0.39 0.42 0.46 79.7 70.1 57.6 1.20 1.15 1.02 18.5 11.5 2.9 0.19 0.20 0.23 55.5 52.7 48.2
MP4T6825 Series
0.59 0.58 0.56 -81.0 -88.0 -96.7
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________ 4
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
Low Current 8 Volt, Low Noise High fT Silicon Transistor Typical Performance Curves (MP4T682535)
POWER DERATING CURVES
300 M P 4 T 6 8 2 5 0 0 (C H I P ) O N I N F I N I T E H E A T S I N K POWER DISSIPATION (mW)
MP4T6825 Series
NOISE FIGURE and ASSOCIATED GAIN at VCE = 8 V, 1 GHz vs COLLECTOR CURRENT
20 18
ASSOCIATED GAIN (dB)
250
16 14 12 10 8 6 4 2 0 1 10
200 150 100 50 0 0
M P4T682533, 39 ( S O T -2 3 , 1 4 3 ) F R E E A I R
NOISE FIGURE (dB)
M P4T 682535 (M I C R O -X )
A SS O C I AT E D G A IN
N O IS E F I G U R E
1 00
20
40
60
80
100
120
140
160
180
200
C O L L E C T O R C U R R E N T (m A )
A M B I E N T T E M P E R A T U R E (C )
GAIN vs FREQUENCY at VCE=8 V and IC = 5 mA
COLL.-BASE CAPACITANCE (pF)
COLLECTOR-BASE CAPACITANCE (COB) vs COLLECTOR-BASE VOLTAGE
0 .3 5 0.3 0 .2 5 0.2 0 .1 5 0.1 0 .0 5 0
25 20 GT U (M A X ) GAIN (dB) 15 10 5 0 1 F R E Q U E N C Y (G H z) 10
|S 21 E |2
1
10 C O L L E C T O R -B AS E V O L T A G E (V o lts )
1 00
GAIN BANDWIDTH PRODUCT (fT ) vs COLLECTOR CURRENT at VCE=8 V
10 9 GAIN BANDWIDTH (GHz) 8 GAIN (dB) 7 6 5 4 3 2 1 0 1 10 C O L L E C T O R C U R R E N T (m A) 10 0
GAIN vs COLLECTOR CURRENT at 1 GHz, VCE=8 V
22 20 18 16 14 12 10 8 6 1 10 C O L L E C T O R C U R R E N T (m A) 10 0 M AG G T U (M AX ) |S 2 1 E |2
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________ 5
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
Low Current 8 Volt, Low Noise High fT Silicon Transistor
MP4T6825 Series
Typical Performance Curves (MP4T682535) Cont.
DC CURRENT GAIN (hFE) vs COLLECTOR CURRENT at VCE = 8 V
1 20 1 10
DC CURRENT GAIN
1 00 90 80 70 60 50 1 10 C O L L E C T O R C U R R E N T (m A) 10 0
OUTPUT POWER at 1 dB COMPRESSION POINT vs COLLECTOR CURRENT VCE=8V
16 14 12
POUT - 1dB (dBm)
f = 1 GHz
10 8 6 4 2 0 0 5 10 15 20 25 C O L L E C T O R C U R R E N T (m A) f = 2 GH z
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________ 6
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
Low Current 8 Volt, Low Noise High fT Silicon Transistor Case Styles
Chip - MP4T682500 MP4T682500
DIM. A B C D
MP4T6825 Series
BASE
INCHES (Nominal) 0.013 0.013 0.0016 0.0045
MM (Nominal) 0.35 0.35 0.040 0.11
B
D THICKNESS
EMITTER
A
C 2 PLCS.
SOT-23 - MP4T682533
F D C olle c tor M G B K A N
MP4T682533
DIM. A B C D E F G H J K L DIM. M N INCHES MIN. MAX. 0.044 0.004 0.040 0.013 0.020 0.003 0.006 0.110 0.119 0.047 0.056 0.037 typical 0.075 typical 0.103 0.024 GRADIENT 10 max. 1 2 . . . 30 MILLIMETERS MIN. MAX. 1.12 0.10 1.00 0.35 0.50 0.08 0.15 2.80 3.00 1.20 1.40 0.95 typical 1.90 typical 2.60 0.60
L H B a se J E m itte r C E
NOTE: 1. Applicable on all sides
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________ 7
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
Low Current 8 Volt, Low Noise High fT Silicon Transistor Case Styles (Con't)
Micro-X - MP4T682535
MP4T6825 Series
Emitter F 4 PLCS. E H
Collector B
Base
Emitter
A
C
G
D
SOT-143 - MP4T682539
E m itte r G J
B a se
A
P
N H
B L
M E K C olle c tor E m itte r
Specification Subject to Change Without Notice
D C
F
M-Pulse Microwave_____________________________________________________________________________ _______ 8
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
Low Current 8 Volt, Low Noise High fT Silicon Transistor
MP4T6825 Series
MP4T682535
DIM. A B C D E F G H INCHES MIN. MAX. 0.092 0.108 0.079 0.087 0.070 0.019 0.025 0.018 0.022 0.150 0.003 0.006 45 MILLIMETERS MIN. MAX. 2.34 2.74 2.01 2.21 1.78 0.48 0.64 0.046 0.56 3.81 0.08 0.15 45
MP4T682539
DIM. A B C D E F G H J K L M DIM. N P INCHES MIN. MAX. 0.044 0.044 0.040 0.030 0.035 0.013 0.020 0.003 0.006 0.110 0.119 0.047 0.056 0.075 typical 0.075 typical 0.103 0.024 GRADIENT 10 max. 1 2 . . . 30
Specification Subject to Change Without Notice
MILLIMETERS MIN. MAX. 1.10 1.10 1.00 0.75 0.90 0.35 0.50 0.08 0.15 2.80 3.00 1.20 1.40 1.90 typical 1.90 typical 2.6 0.6
M-Pulse Microwave_____________________________________________________________________________ _______ 9
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
Low Current 8 Volt, Low Noise High fT Silicon Transistor
NOTE: 1. Applicable on all sides
MP4T6825 Series
Specification Subject to Change Without Notice
M-Pulse Microwave_____________________________________________________________________________ _______ 10
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440

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